BSO203SPHXUMA1
MOSFET P-CH 20V 7A 8DSOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ P-Channel MOSFET, part number BSO203SPHXUMA1, is a surface mount device in a PG-DSO-8 package. This component features a 20V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 7A at 25°C. The Rds On is specified at a maximum of 21mOhm at 8.9A and 4.5V gate-source voltage. With a maximum power dissipation of 1.6W (Ta), this MOSFET is designed for applications requiring efficient switching and power control. Key parameters include a gate charge (Qg) of 39 nC @ 4.5 V and input capacitance (Ciss) of 3750 pF @ 15 V. The BSO203SPHXUMA1 finds utility in automotive and industrial power management systems. It operates within an ambient temperature range of -55°C to 150°C.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Ta) |
| Rds On (Max) @ Id, Vgs | 21mOhm @ 8.9A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.6W (Ta) |
| Vgs(th) (Max) @ Id | 1.2V @ 100µA |
| Supplier Device Package | PG-DSO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3750 pF @ 15 V |
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