BSO201SPNTMA1
MOSFET P-CH 20V 14.9A 8DSOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ BSO201SPNTMA1 is a P-Channel Power MOSFET designed for robust power management applications. This component features a Drain-to-Source Voltage (Vdss) of 20 V and a continuous Drain current (Id) capability of 14.9 A at 25°C. The device boasts a low on-resistance (Rds On) of 8 mOhm at 14.9 A and 4.5 V Vgs, contributing to high efficiency. The gate charge (Qg) is specified at a maximum of 128 nC at 4.5 V, with input capacitance (Ciss) reaching 5962 pF at 15 V.
The BSO201SPNTMA1 is housed in an 8-SOIC (PG-DSO-8) surface-mount package, suitable for automated assembly. Its maximum power dissipation is 2.5 W (Ta). The operating temperature range is -55°C to 150°C (TJ). This MOSFET is commonly employed in automotive, industrial, and consumer electronics, particularly in power switching, load management, and battery protection circuits. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: Optimos™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14.9A (Ta) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 14.9A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | PG-DSO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 128 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5962 pF @ 15 V |
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