BSO200P03SNTMA1
MOSFET P-CH 30V 7.4A 8DSOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ P-Channel MOSFET, part number BSO200P03SNTMA1, is engineered for demanding applications. This device features a 30 V drain-source voltage and a continuous drain current of 7.4 A at 25°C (Ta). The P-channel enhancement mode MOSFET exhibits a maximum Rds(on) of 20 mOhm at 9.1 A and 10 V gate-source voltage, facilitated by 10 V drive. Key parameters include a gate charge (Qg) of 54 nC at 10 V and input capacitance (Ciss) of 2330 pF at 25 V. The component's power dissipation is rated at 1.56 W (Ta). Mounting is via surface mount in an 8-SOIC (PG-DSO-8) package, supplied on tape and reel. This MOSFET is suitable for use in automotive and industrial power management systems.
Additional Information
Series: Optimos™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.4A (Ta) |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 9.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.56W (Ta) |
| Vgs(th) (Max) @ Id | 1.5V @ 100µA |
| Supplier Device Package | PG-DSO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 54 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2330 pF @ 25 V |
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