BSO200P03SHXUMA1
MOSFET P-CH 30V 7.4A 8DSOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ P-Channel Power MOSFET, BSO200P03SHXUMA1, is a surface-mount device in a PG-DSO-8 package. This P-channel MOSFET features a 30V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 7.4A at 25°C (Ta). The device exhibits a low on-resistance (Rds On) of 20mOhm at 9.1A and 10V gate-source voltage (Vgs). With a maximum power dissipation of 1.56W (Ta) and a junction temperature range of -55°C to 150°C, it is suitable for applications in automotive and industrial power management. The typical gate charge (Qg) is 54 nC at 10V and input capacitance (Ciss) is 2330 pF at 25V.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.4A (Ta) |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 9.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.56W (Ta) |
| Vgs(th) (Max) @ Id | 1.5V @ 100µA |
| Supplier Device Package | PG-DSO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 54 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2330 pF @ 25 V |
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