BSO200N03S
MOSFET N-CH 30V 7A 8DSOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' OptiMOS™ BSO200N03S is an N-channel Power MOSFET designed for efficient power switching applications. This component features a 30V drain-source breakdown voltage and a continuous drain current capability of 7A at 25°C, with a maximum power dissipation of 1.56W (Ta). The low on-resistance of 20mOhm at 8.8A and 10V gate-source voltage is achieved through advanced OptiMOS™ technology, minimizing conduction losses.
The device is available in a PG-DSO-8 package, suitable for surface mounting and supplied on tape and reel. Key electrical parameters include a gate charge (Qg) of 6.5 nC at 5V and input capacitance (Ciss) of 840 pF at 15V. The drive voltage range for optimal Rds(on) is 4.5V to 10V, with a maximum gate-source voltage of ±20V. Operating temperature range is -55°C to 150°C (TJ). This MOSFET is utilized in various industries including automotive and industrial automation.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Ta) |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 8.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.56W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 10µA |
| Supplier Device Package | PG-DSO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.5 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 840 pF @ 15 V |
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