BSO130P03SNTMA1
MOSFET P-CH 30V 9.2A 8DSOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ P-Channel MOSFET, BSO130P03SNTMA1, is designed for demanding applications. This surface mount device features a 30V drain-source breakdown voltage and a continuous drain current rating of 9.2A at 25°C. With a low Rds(on) of 13mOhm at 11.3A and 10V Vgs, it minimizes conduction losses. The PG-DSO-8 package, also known as 8-SOIC, facilitates efficient thermal management with a maximum power dissipation of 1.56W. Key parameters include a gate charge of 81nC and input capacitance of 3520pF at 25V. This MOSFET is suitable for power management, automotive, and industrial control systems. It operates within a junction temperature range of -55°C to 150°C.
Additional Information
Series: Optimos™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 11.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.56W (Ta) |
| Vgs(th) (Max) @ Id | 2.2V @ 140µA |
| Supplier Device Package | PG-DSO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 81 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3520 pF @ 25 V |
Request a Quote
Clients Also Buy
BSS308PEH6327XTSA1
MOSFET P-CH 30V 2A SOT23-3
BSZ086P03NS3EGATMA1
MOSFET P-CH 30V 13.5A/40A TSDSON
BSL606SNH6327XTSA1
MOSFET N-CH 60V 4.5A TSOP-6
