BSO130P03SHXUMA1
MOSFET P-CH 30V 9.2A 8DSOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ P-Channel Power MOSFET, BSO130P03SHXUMA1, features a 30V drain-source voltage and a continuous drain current of 9.2A at 25°C. This surface mount device, packaged in an 8-DSO (PG-DSO-8) package, offers a low on-resistance of 13mOhm at 10V gate-source voltage and 11.7A drain current. Its typical applications span automotive power management and industrial motor control systems. Key electrical characteristics include a gate charge of 81nC and an input capacitance of 3520pF at 25V. The device operates within an extended temperature range of -55°C to 150°C.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 11.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.56W (Ta) |
| Vgs(th) (Max) @ Id | 2.2V @ 140µA |
| Supplier Device Package | PG-DSO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 81 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3520 pF @ 25 V |
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