BSO130N03MSGXUMA1
MOSFET N-CH 30V 9A 8DSOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ BSO130N03MSGXUMA1 is an N-Channel Power MOSFET designed for applications requiring efficient power switching. This device features a 30V drain-source breakdown voltage and supports a continuous drain current of 9A at 25°C. The low on-resistance is rated at a maximum of 13mOhm at 11.1A and 10V gate-source voltage, minimizing conduction losses. With a gate charge (Qg) of 17 nC at 10V and input capacitance (Ciss) of 1300 pF at 15V, it offers good switching performance. The PG-DSO-8 package facilitates surface mounting and is supplied on tape and reel. Typical applications include power management, voltage regulation, and motor control in automotive and industrial sectors. The operating temperature range is -55°C to 150°C.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta) |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 11.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.56W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | PG-DSO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 15 V |
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