BSO110N03MSGXUMA1
MOSFET N-CH 30V 10A 8DSOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies BSO110N03MSGXUMA1 is an OptiMOS™ N-Channel Power MOSFET designed for demanding applications. This component features a 30V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 10A at 25°C. The low on-resistance (Rds On) of 11mOhm at 12.1A and 10V Vgs ensures efficient power transfer. With a gate charge (Qg) of 20 nC at 10V and input capacitance (Ciss) of 1500 pF at 15V, it offers optimized switching performance. The PG-DSO-8 package facilitates surface mounting, and the device operates within a temperature range of -55°C to 150°C. Its robust design makes it suitable for use in automotive, industrial, and consumer electronics sectors.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 12.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.56W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | PG-DSO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 15 V |
Request a Quote
Clients Also Buy
BSS308PEH6327XTSA1
MOSFET P-CH 30V 2A SOT23-3
BSZ086P03NS3EGATMA1
MOSFET P-CH 30V 13.5A/40A TSDSON
BSL606SNH6327XTSA1
MOSFET N-CH 60V 4.5A TSOP-6
