BSO104N03S
MOSFET N-CH 30V 10A 8DSOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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The Infineon Technologies BSO104N03S is an N-Channel Power MOSFET from the OptiMOS™ series, designed for demanding applications. This component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 10A at 25°C case temperature. Optimized for efficiency, it offers a low on-resistance (Rds On) of 9.7mOhm at 13A and 10V Vgs. The device operates with a gate-source voltage range of ±20V and a threshold voltage (Vgs(th)) of 2V at 30µA. Key electrical characteristics include a gate charge (Qg) of 16nC at 5V and input capacitance (Ciss) of 2130pF at 15V. Packaged in an 8-SOIC (PG-DSO-8) surface-mount configuration, it is supplied on tape and reel. The BSO104N03S is suitable for various industrial and automotive power management solutions. It operates within a temperature range of -55°C to 150°C.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.7mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.56W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 30µA |
| Supplier Device Package | PG-DSO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2130 pF @ 15 V |
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