BSO094N03S
MOSFET N-CH 30V 10A 8DSOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies presents the BSO094N03S, an N-Channel OptiMOS™ MOSFET designed for efficient power management. This device features a 30V drain-source voltage and a continuous drain current capability of 10A at 25°C (Ta), with a maximum power dissipation of 1.56W (Ta). The low on-resistance is specified at 9.1mOhm at 13A and 10V gate-source voltage. Key electrical characteristics include a gate charge of 18nC (Max) at 5V Vgs and an input capacitance of 2300pF (Max) at 15V Vds. The BSO094N03S is housed in a PG-DSO-8 surface mount package, suitable for applications requiring compact footprints. Operating temperature ranges from -55°C to 150°C (TJ). This component finds application in automotive and industrial power control systems.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
| Rds On (Max) @ Id, Vgs | 9.1mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.56W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 30µA |
| Supplier Device Package | PG-DSO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2300 pF @ 15 V |
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