BSO083N03MSGXUMA1
MOSFET N-CH 30V 11A 8DSOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies BSO083N03MSGXUMA1 is an N-Channel Power MOSFET from the OptiMOS™ series, packaged in a PG-DSO-8 surface mount configuration. This component features a 30 V drain-source breakdown voltage and a continuous drain current capability of 11 A at 25°C, with a maximum power dissipation of 1.56 W. Key performance metrics include a low on-resistance of 8.3 mOhm at 14 A and 10 V gate-source voltage, and a gate charge of 27 nC at 10 V. The MOSFET is designed for operation across a wide temperature range of -55°C to 150°C. This device is suitable for applications in automotive, industrial power control, and consumer electronics where efficient switching and power handling are critical. It is supplied in Tape & Reel packaging.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
| Rds On (Max) @ Id, Vgs | 8.3mOhm @ 14A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.56W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | PG-DSO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2100 pF @ 15 V |
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