BSO080P03SNTMA1
MOSFET P-CH 30V 12.6A 8DSOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ P-Channel MOSFET, part number BSO080P03SNTMA1, offers a 30V drain-source voltage and a continuous drain current of 12.6A at 25°C (Ta). This surface mount device, housed in a PG-DSO-8 package, features a low on-resistance of 8mOhm at 14.9A and 10V Vgs, indicative of its high efficiency. Key parameters include a gate charge of 136 nC (max) at 10V and input capacitance of 5890 pF (max) at 25V. The operating temperature range is -55°C to 150°C. This component is suitable for applications in automotive and industrial power management.
Additional Information
Series: Optimos™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12.6A (Ta) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 14.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.79W (Ta) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | PG-DSO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 136 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5890 pF @ 25 V |
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