BSO080P03NS3GXUMA1
MOSFET P-CH 30V 12A 8DSOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ P-Channel MOSFET, BSO080P03NS3GXUMA1, offers a 30V drain-source voltage and 12A continuous drain current at 25°C. This device features a low on-resistance of 8mOhm at 14.8A and 10V Vgs, with a maximum power dissipation of 1.6W. The P-Channel MOSFET is housed in a PG-DSO-8 package for surface mounting, with a typical input capacitance of 6750pF and gate charge of 81nC. Operating across a temperature range of -55°C to 150°C, this component is suitable for applications in automotive, industrial power control, and battery management systems. The BSO080P03NS3GXUMA1 is supplied on tape and reel.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 14.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.6W (Ta) |
| Vgs(th) (Max) @ Id | 3.1V @ 150µA |
| Supplier Device Package | PG-DSO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 81 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6750 pF @ 15 V |
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