BSO080P03NS3EGXUMA1
MOSFET P-CH 30V 12A 8DSOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies BSO080P03NS3EGXUMA1 is a P-Channel Power MOSFET from the OptiMOS™ series. This component features a 30V drain-source breakdown voltage and a continuous drain current capability of 12A at 25°C. With a maximum on-resistance of 8mOhm at 14.8A and 10V gate-source voltage, it offers efficient power switching. The PG-DSO-8 package provides a surface mount solution, rated for 1.6W power dissipation. Key parameters include a gate charge of 81 nC at 10V and input capacitance of 6750 pF at 15V. Operating temperature range is -55°C to 150°C. This MOSFET is suitable for applications in industrial power supplies, automotive systems, and power management solutions.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 14.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.6W (Ta) |
| Vgs(th) (Max) @ Id | 3.1V @ 150µA |
| Supplier Device Package | PG-DSO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 81 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6750 pF @ 15 V |
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