BSO072N03S
MOSFET N-CH 30V 12A 8DSOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ BSO072N03S is an N-Channel Power MOSFET designed for high-efficiency switching applications. This device features a 30V drain-source voltage (Vdss) and a continuous drain current capability of 12A at 25°C ambient temperature. The low on-resistance (Rds On) of 6.8mOhm at 15A and 10V gate-source voltage (Vgs) ensures minimal conduction losses.
Engineered with advanced MOSFET technology, the BSO072N03S offers a maximum power dissipation of 1.56W (Ta) and a gate charge (Qg) of 25nC at 5V Vgs. The input capacitance (Ciss) is rated at a maximum of 3230pF at 15V Vds. The device operates across a wide temperature range of -55°C to 150°C (TJ). Supplied in a PG-DSO-8 package, this surface mount component is suitable for demanding applications in automotive and industrial sectors. Drive voltages range from 4.5V to 10V for optimal Rds On performance.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |
| Rds On (Max) @ Id, Vgs | 6.8mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.56W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 45µA |
| Supplier Device Package | PG-DSO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3230 pF @ 15 V |
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