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BSO065N03MSGXUMA1

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BSO065N03MSGXUMA1

MOSFET N-CH 30V 13A 8DSO

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies OptiMOS™ N-Channel MOSFET, part number BSO065N03MSGXUMA1, offers a 30V drain-source voltage and 13A continuous drain current at 25°C. This surface mount device, housed in a PG-DSO-8 package, features a low on-resistance of 6.5mOhm at 16A and 10V Vgs. Key parameters include a gate charge (Qg) of 40 nC at 10V and input capacitance (Ciss) of 3100 pF at 15V. The MOSFET operates across a temperature range of -55°C to 150°C. This component is utilized in various industrial applications, including power management and automotive systems.

Additional Information

Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C13A (Ta)
Rds On (Max) @ Id, Vgs6.5mOhm @ 16A, 10V
FET Feature-
Power Dissipation (Max)1.56W (Ta)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device PackagePG-DSO-8
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3100 pF @ 15 V

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