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BSO064N03S

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BSO064N03S

MOSFET N-CH 30V 12A 8DSO

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies OptiMOS™ MOSFET N-Channel BSO064N03S offers a 30V drain-source voltage and a continuous drain current of 12A at 25°C in a PG-DSO-8 package. This surface mount device features a low on-resistance of 6.4mOhm at 16A and 10V, with a gate charge of 28nC at 5V. Its input capacitance (Ciss) is 3620pF at 15V, and it supports gate-source voltages up to ±20V, with a threshold voltage (Vgs(th)) of 2V at 50µA. The maximum power dissipation is 1.56W at 25°C. Operating temperature range is -55°C to 150°C. This component is utilized in applications such as power management and automotive systems. This device is supplied on tape and reel (TR).

Additional Information

Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C12A (Ta)
Rds On (Max) @ Id, Vgs6.4mOhm @ 16A, 10V
FET Feature-
Power Dissipation (Max)1.56W (Ta)
Vgs(th) (Max) @ Id2V @ 50µA
Supplier Device PackagePG-DSO-8
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs28 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds3620 pF @ 15 V

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