BSO052N03S
MOSFET N-CH 30V 14A 8DSOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ N-Channel Power MOSFET, part number BSO052N03S, features a 30 V drain-source voltage and 14 A continuous drain current at 25°C. This device offers a low on-resistance of 5.2 mOhm at 17 A and 10 Vgs, with a gate charge of 43 nC at 5 Vgs. The input capacitance (Ciss) is a maximum of 5530 pF at 15 V. Designed for surface mounting in the PG-DSO-8 package, it has a maximum power dissipation of 1.56 W. Operating temperature range is -55°C to 150°C. This component is utilized in applications such as power management and motor control within the automotive and industrial sectors.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Ta) |
| Rds On (Max) @ Id, Vgs | 5.2mOhm @ 17A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.56W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 70µA |
| Supplier Device Package | PG-DSO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5530 pF @ 15 V |
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