BSO051N03MS G
MOSFET N-CH 30V 14A 8DSOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies BSO051N03MS-G is an N-Channel OptiMOS™ Power MOSFET. This device features a 30V drain-source voltage and a continuous drain current of 14A at 25°C. The Rds(on) is specified at a maximum of 5.1mOhm at 18A and 10V Vgs. The component is housed in an 8-SOIC (PG-DSO-8) package suitable for surface mounting. Key electrical characteristics include a gate charge (Qg) of 55 nC at 10V and input capacitance (Ciss) of 4300 pF at 15V. Maximum power dissipation is 1.56W. This MOSFET is utilized in applications such as power management and automotive systems.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Ta) |
| Rds On (Max) @ Id, Vgs | 5.1mOhm @ 18A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.56W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | PG-DSO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4300 pF @ 15 V |
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