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BSO040N03MSGXUMA1

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BSO040N03MSGXUMA1

MOSFET N-CH 30V 16A 8DSO

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies OptiMOS™ BSO040N03MSGXUMA1 is a 30V N-Channel Power MOSFET in a PG-DSO-8 package. This device offers a low on-resistance of 4mOhm at 20A and 10V Vgs, facilitating efficient power switching. With a continuous drain current (Id) capability of 16A at 25°C and a maximum power dissipation of 1.56W (Ta), it is suitable for demanding applications. Key electrical parameters include a gate charge (Qg) of 73 nC at 10V and input capacitance (Ciss) of 5700 pF at 15V. The MOSFET operates across a wide temperature range of -55°C to 150°C. This component finds application in automotive and industrial power management systems. Supplied on Tape & Reel (TR).

Additional Information

Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C16A (Ta)
Rds On (Max) @ Id, Vgs4mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)1.56W (Ta)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device PackagePG-DSO-8
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5700 pF @ 15 V

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