BSO033N03MSGXUMA1
MOSFET N-CH 30V 17A 8DSOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ BSO033N03MSGXUMA1 is an N-Channel MOSFET with a drain-source voltage (Vdss) of 30 V. This component features a low on-resistance (Rds On) of 3.3 mOhm at 22 A and 10 V Vgs, facilitating high-efficiency power switching. The continuous drain current (Id) is rated at 17 A at 25°C, with a maximum power dissipation of 1.56 W. Key parameters include a gate charge (Qg) of 124 nC at 10 V and input capacitance (Ciss) of 9600 pF at 15 V. Designed for surface mount applications, it is supplied in the PG-DSO-8 package, delivered on tape and reel. Operating temperature range is -55°C to 150°C. This device is suitable for applications in the automotive and industrial sectors demanding robust power management solutions.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Ta) |
| Rds On (Max) @ Id, Vgs | 3.3mOhm @ 22A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.56W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | PG-DSO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 124 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9600 pF @ 15 V |
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