BSL802SNL6327HTSA1
MOSFET N-CH 20V 7.5A TSOP-6Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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The Infineon Technologies OptiMOS™ BSL802SNL6327HTSA1 is an N-Channel Power MOSFET designed for demanding applications. This component features a 20V drain-source voltage (Vdss) and a continuous drain current (Id) capability of 7.5A at 25°C. Optimized for efficiency, it offers a low on-resistance (Rds On) of 22mOhm at 7.5A and 2.5V Vgs. The device supports a low gate drive voltage range of 1.8V to 2.5V, with a maximum gate charge (Qg) of 4.7 nC at 2.5V. Input capacitance (Ciss) is specified at 1347 pF maximum at 10V Vds. The BSL802SNL6327HTSA1 is housed in a PG-TSOP6-6 package, suitable for surface mounting. It operates across a wide temperature range from -55°C to 150°C (TJ) and has a maximum power dissipation of 2W (Ta). This MOSFET is utilized in industries such as automotive and industrial power management.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 7.5A, 2.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 750mV @ 30µA |
| Supplier Device Package | PG-TSOP6-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 2.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 4.7 nC @ 2.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1347 pF @ 10 V |
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