BSL373SNH6327XTSA1
MOSFET N-CH 100V 2A TSOP-6Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ N-Channel Power MOSFET, part number BSL373SNH6327XTSA1, is housed in a PG-TSOP6-6 (SOT-23-6 Thin) package. This surface mount device features a drain-to-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 2 A at 25°C. The Rds(on) is specified at a maximum of 230 mOhm at 2 A and 10 V gate drive. It offers a gate charge (Qg) of 9.3 nC at 10 V and an input capacitance (Ciss) of 265 pF at 25 V. The maximum power dissipation is 2 W. Operating temperature range is -55°C to 150°C. This component is suitable for applications in automotive and industrial sectors.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
| Rds On (Max) @ Id, Vgs | 230mOhm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 218µA |
| Supplier Device Package | PG-TSOP6-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 265 pF @ 25 V |
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