BSL372SNH6327XTSA1
MOSFET N-CH 100V 2A TSOP-6Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ series N-Channel MOSFET, part number BSL372SNH6327XTSA1, features a 100V drain-source breakdown voltage and a continuous drain current of 2A at 25°C. This device offers a maximum on-resistance of 220mOhm at 2A and 10V Vgs, with a gate charge of 14.3 nC at 10V. The N-Channel MOSFET utilizes Metal Oxide technology and is supplied in a PG-TSOP6-6 package for surface mounting. Key parameters include a maximum power dissipation of 2W (Ta) and an operating temperature range of -55°C to 150°C. This component is suitable for applications in consumer electronics, industrial automation, and power management systems.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
| Rds On (Max) @ Id, Vgs | 220mOhm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 1.8V @ 218µA |
| Supplier Device Package | PG-TSOP6-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 14.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 329 pF @ 25 V |
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