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BSL305SPEH6327XTSA1

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BSL305SPEH6327XTSA1

MOSFET P-CH 30V 5.3A TSOP-6

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies presents the BSL305SPEH6327XTSA1, a P-Channel OptiMOS™ series MOSFET. This component features a 30V Drain-to-Source Voltage (Vdss) and a continuous drain current capability of 5.3A (Ta) at 25°C. The device offers a low on-resistance of 45mOhm maximum at 5.3A and 10V Vgs. With a maximum power dissipation of 2W (Ta), it utilizes a PG-TSOP6-6 supplier device package for surface mounting. Key parameters include a gate charge (Qg) of 14 nC maximum at 10V Vgs and input capacitance (Ciss) of 939 pF maximum at 15V Vds. This MOSFET operates within a temperature range of -55°C to 150°C (TJ). Its specifications make it suitable for applications in the automotive and industrial sectors.

Additional Information

Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-23-6 Thin, TSOT-23-6
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C5.3A (Ta)
Rds On (Max) @ Id, Vgs45mOhm @ 5.3A, 10V
FET Feature-
Power Dissipation (Max)2W (Ta)
Vgs(th) (Max) @ Id2V @ 20µA
Supplier Device PackagePG-TSOP6-6
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds939 pF @ 15 V

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