BSL303SPEH6327XTSA1
MOSFET P-CH 30V 6.3A TSOP-6Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ P-Channel MOSFET, part number BSL303SPEH6327XTSA1, offers a 30V drain-source breakdown voltage and a continuous drain current capability of 6.3A at 25°C ambient. This device features a low on-resistance of 33mOhm maximum at 6.3A and 10V gate-source voltage. Designed for surface mounting, it is provided in the PG-TSOP6-6 package. Key electrical characteristics include a gate charge of 20.9 nC maximum and an input capacitance of 1401 pF maximum at 15V drain-source voltage. The BSL303SPEH6327XTSA1 is suitable for applications requiring efficient switching and power management in automotive and industrial sectors. It operates within an extended temperature range of -55°C to 150°C.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 33mOhm @ 6.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 30µA |
| Supplier Device Package | PG-TSOP6-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 20.9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1401 pF @ 15 V |
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