BSL302SNL6327HTSA1
MOSFET N-CH 30V 7.1A TSOP-6Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ N-Channel MOSFET, part number BSL302SNL6327HTSA1, is designed for high-efficiency power switching applications. This device features a 30V drain-source voltage and a continuous drain current of 7.1A at 25°C, with a maximum power dissipation of 2W. The BSL302SNL6327HTSA1 offers a low on-resistance of 25mOhm at 7.1A and 10V Vgs, and a gate charge of 6.6 nC at 5V Vgs. It utilizes advanced MOSFET technology and is supplied in a PG-TSOP6-6 package, suitable for surface mounting. Operating temperature range is -55°C to 150°C. This component finds application in automotive, industrial, and consumer electronics power management systems.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.1A (Ta) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 7.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 30µA |
| Supplier Device Package | PG-TSOP6-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.6 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 750 pF @ 15 V |
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