BSL302SNH6327XTSA1
MOSFET N-CH 30V 7.1A TSOP-6Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies presents the BSL302SNH6327XTSA1, an N-Channel MOSFET from the OptiMOS™ series. This component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 7.1A at 25°C, with a maximum power dissipation of 2W (Ta). The device is housed in a PG-TSOP6-6 package, suitable for surface mounting. Key electrical characteristics include a maximum on-resistance (Rds On) of 25mOhm at 7.1A and 10V Vgs, and a gate charge (Qg) of 6.6 nC at 5V Vgs. Input capacitance (Ciss) is 750pF at 15V Vds. Operating temperature range is -55°C to 150°C. This MOSFET is widely utilized in industrial automation, power management, and automotive applications.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.1A (Ta) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 7.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 30µA |
| Supplier Device Package | PG-TSOP6-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.6 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 750 pF @ 15 V |
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