BSL211SPT
MOSFET P-CH 20V 4.7A TSOP-6Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies P-Channel MOSFET, part number BSL211SPT, from the OptiMOS™ series. This device features a 20 V drain-source voltage and a continuous drain current of 4.7 A at 25°C. With a maximum on-resistance of 67 mOhm at 4.7 A and 4.5 V, it offers efficient power switching. The device is housed in a PG-TSOP6-6 package, suitable for surface mounting. Key parameters include a gate charge (Qg) of 12.4 nC at 4.5 V and input capacitance (Ciss) of 654 pF at 15 V. Operating temperature range is -55°C to 150°C (TJ). This MOSFET is commonly utilized in automotive and industrial applications where high-side switching and efficient power management are critical.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.7A (Ta) |
| Rds On (Max) @ Id, Vgs | 67mOhm @ 4.7A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 1.2V @ 25µA |
| Supplier Device Package | PG-TSOP6-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 12.4 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 654 pF @ 15 V |
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