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BSL207SP

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BSL207SP

MOSFET P-CH 20V 6A TSOP-6

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies P-Channel MOSFET, part of the OptiMOS™ series, with part number BSL207SP. This device features a drain-source voltage (Vdss) of 20 V and a continuous drain current (Id) of 6 A at 25°C (Ta). The BSL207SP is designed for surface mounting in a PG-TSOP6-6 package, offering a maximum power dissipation of 2W (Ta). Key parameters include a maximum Rds On of 41mOhm at 6A and 4.5V, with a threshold voltage (Vgs(th)) of 1.2V at 40µA. Gate charge (Qg) is rated at 20 nC @ 4.5 V, and input capacitance (Ciss) is a maximum of 1007 pF @ 15 V. It operates across a temperature range of -55°C to 150°C (TJ) and supports gate-source voltages up to ±12V. This component is suitable for applications in automotive and industrial sectors. It is supplied in Tape & Reel (TR) packaging.

Additional Information

Series: Optimos™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-23-6 Thin, TSOT-23-6
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C6A (Ta)
Rds On (Max) @ Id, Vgs41mOhm @ 6A, 4.5V
FET Feature-
Power Dissipation (Max)2W (Ta)
Vgs(th) (Max) @ Id1.2V @ 40µA
Supplier Device PackagePG-TSOP6-6
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Vgs (Max)±12V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1007 pF @ 15 V

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