BSL202SNL6327HTSA1
MOSFET N-CH 20V 7.5A TSOP-6Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ BSL202SNL6327HTSA1 is an N-Channel Power MOSFET designed for high-efficiency applications. This component features a Drain-Source Voltage (Vdss) of 20V and a continuous drain current (Id) of 7.5A at 25°C, with a maximum power dissipation of 2W. The device exhibits a low on-resistance (Rds On) of 22mOhm at 7.5A and 4.5V, facilitating minimal conduction losses. Key parameters include a gate charge (Qg) of 8.7 nC at 4.5V and input capacitance (Ciss) of 1147 pF at 10V. It supports gate drive voltages ranging from 2.5V to 4.5V, with a maximum Vgs of ±12V. The threshold voltage (Vgs(th)) is 1.2V at 30µA. The BSL202SNL6327HTSA1 is housed in a PG-TSOP6-6 (SOT-23-6 Thin) package, suitable for surface mounting. This MOSFET is utilized in various industries including consumer electronics and industrial automation. The component is supplied in a Tape & Reel (TR) configuration.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 7.5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 1.2V @ 30µA |
| Supplier Device Package | PG-TSOP6-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.7 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1147 pF @ 10 V |
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