BSF450NE7NH3XUMA1
MOSFET N-CH 75V 5A/15A 2WDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ BSF450NE7NH3XUMA1 is an N-Channel power MOSFET designed for demanding applications. This device features a 75V drain-source voltage with a continuous drain current capability of 5A at ambient temperature and 15A at case temperature. The low on-resistance of 45mOhm is achieved at 8A and 10V gate-source voltage. Engineered for efficient thermal management, it offers a maximum power dissipation of 2.2W (Ta) and 18W (Tc). The MG-WDSON-2, CanPAK M™ package facilitates surface mounting, making it suitable for high-density designs. Key electrical characteristics include a gate charge of 6 nC at 10V and input capacitance of 390 pF at 37.5V. Operating across a temperature range of -40°C to 150°C, this MOSFET finds application in automotive, industrial power, and consumer electronics sectors.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-WDSON |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta), 15A (Tc) |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.2W (Ta), 18W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 8µA |
| Supplier Device Package | MG-WDSON-2, CanPAK M™ |
| Drive Voltage (Max Rds On, Min Rds On) | 7V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 390 pF @ 37.5 V |
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