BSF134N10NJ3GXUMA1
MOSFET N-CH 100V 9A/40A 2WDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies BSF134N10NJ3GXUMA1 is an N-Channel Power MOSFET from the OptiMOS™ series. This device features a 100 V drain-source breakdown voltage and offers a continuous drain current of 9 A at 25°C ambient temperature (Ta) and 40 A at 25°C case temperature (Tc). The Rds(on) is specified at a maximum of 13.4 mOhm at 30 A and 10 Vgs. Power dissipation is 2.2 W (Ta) and 43 W (Tc). The MOSFET is housed in a 3-WDSON package, specifically the MG-WDSON-2, CanPAK M™ variant, suitable for surface mounting. Key parameters include a maximum gate charge (Qg) of 30 nC at 10 V and an input capacitance (Ciss) of 2300 pF at 50 V. The operating junction temperature range is -40°C to 150°C. This component is commonly utilized in power management applications across industrial and automotive sectors. The device is supplied on tape and reel.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-WDSON |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta), 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 13.4mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.2W (Ta), 43W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 40µA |
| Supplier Device Package | MG-WDSON-2, CanPAK M™ |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2300 pF @ 50 V |
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