BSF083N03LQ G
MOSFET N-CH 30V 13A/53A 2WDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ BSF083N03LQ-G is an N-channel power MOSFET featuring a 30V drain-source breakdown voltage. This device offers a continuous drain current of 13A at 25°C ambient and 53A at 25°C case temperature, with a maximum on-resistance of 8.3mOhm at 20A and 10V gate-source voltage. Designed for surface mount applications, it is housed in a 3-WDSON package (MG-WDSON-2, CanPAK M™) and supplied on tape and reel. Key electrical characteristics include a gate charge of 18 nC maximum at 10V and an input capacitance of 1800 pF maximum at 15V drain-source voltage. Power dissipation is rated at 2.2W ambient and 36W case. This MOSFET is suitable for operation across a temperature range of -40°C to 150°C. Applications include automotive power management and industrial power conversion.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-WDSON |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta), 53A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.3mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.2W (Ta), 36W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | MG-WDSON-2, CanPAK M™ |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 15 V |
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