BSF077N06NT3GXUMA1
MOSFET N-CH 60V 13A/56A 2WDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ BSF077N06NT3GXUMA1 is an N-Channel MOSFET designed for demanding applications. Featuring a 60V drain-to-source breakdown voltage and a low on-resistance of 7.7mOhm at 30A and 10V gate drive. This device offers continuous drain currents of 13A at 25°C ambient and 56A at 25°C case temperature. With a maximum power dissipation of 2.2W (Ta) and 38W (Tc), it is suitable for thermal management in high-power density designs. The MG-WDSON-2, CanPAK M™ package provides efficient heat dissipation for surface mount applications. Key parameters include gate charge of 46 nC at 10V and input capacitance of 3700 pF at 30V. Operating temperature range is -40°C to 150°C (TJ). This component is commonly utilized in automotive, industrial power control, and power supply applications.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-WDSON |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta), 56A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.7mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.2W (Ta), 38W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 33µA |
| Supplier Device Package | MG-WDSON-2, CanPAK M™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 46 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3700 pF @ 30 V |
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