BSF050N03LQ3GXUMA1
MOSFET N-CH 30V 15A/60A 2WDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ BSF050N03LQ3GXUMA1 is a 30V N-channel power MOSFET in a 3-WDSON (MG-WDSON-2, CanPAK M™) surface-mount package. This device offers exceptional performance with a maximum Rds(on) of 5mOhm at 20A and 10V Vgs. It supports continuous drain currents of 15A (ambient) and 60A (case) at 25°C. Power dissipation capabilities are rated at 2.2W (ambient) and 28W (case). Key electrical parameters include a gate charge (Qg) of 42 nC (max) at 10V Vgs, input capacitance (Ciss) of 3000 pF (max) at 15V Vds, and a gate-source voltage (Vgs) range of ±20V. The threshold voltage (Vgs(th)) is 2.2V (max) at 250µA. Operating temperature range is -40°C to 150°C (TJ). This component is widely utilized in industrial and automotive applications requiring efficient power switching. Supplied on Tape & Reel (TR).
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-WDSON |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Ta), 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.2W (Ta), 28W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | MG-WDSON-2, CanPAK M™ |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3000 pF @ 15 V |
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