BSF045N03MQ3 G
MOSFET N-CH 30V 18A/63A 2WDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ N-Channel Power MOSFET, part number BSF045N03MQ3-G, features a 30V drain-source voltage and a continuous drain current of 18A at ambient temperature and 63A at case temperature. This surface mount device utilizes a 3-WDSON package (MG-WDSON-2, CanPAK M™) and boasts a low on-resistance of 4.5mOhm at 20A and 10V Vgs. Key specifications include a gate charge of 34 nC at 10V and input capacitance of 2600 pF at 15V. The operating temperature range is -40°C to 150°C. This component is commonly employed in power management applications within the automotive and industrial sectors. Supplied on Tape & Reel.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-WDSON |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Ta), 63A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | MG-WDSON-2, CanPAK M™ |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2600 pF @ 15 V |
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