BSF035NE2LQXUMA1
MOSFET N-CH 25V 22A/69A 2WDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies presents the BSF035NE2LQXUMA1, an N-Channel Power MOSFET from the OptiMOS™ series. This component features a drain-source voltage (Vdss) of 25V and offers a continuous drain current (Id) of 22A at ambient temperature and 69A at case temperature. The Rds On is specified at a maximum of 3.5mOhm at 30A and 10V gate-source voltage. Key electrical parameters include a maximum gate charge (Qg) of 25 nC at 10V and a maximum input capacitance (Ciss) of 1862 pF at 12V. The device supports a drive voltage range from 4.5V to 10V and has a maximum gate-source voltage (Vgs) of ±20V. Power dissipation is rated at 2.2W (Ta) and 28W (Tc). The BSF035NE2LQXUMA1 is housed in a 3-WDSON package, specifically the MG-WDSON-2, CanPAK M™ variant, suitable for surface mounting. It operates across a temperature range of -40°C to 150°C. This MOSFET is commonly utilized in automotive and industrial applications requiring efficient power switching. It is supplied in Tape & Reel packaging.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-WDSON |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Ta), 69A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.5mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.2W (Ta), 28W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | MG-WDSON-2, CanPAK M™ |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1862 pF @ 12 V |
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