BSF030NE2LQXUMA1
MOSFET N-CH 25V 24A/75A 2WDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ BSF030NE2LQXUMA1 is an N-channel Power MOSFET designed for demanding applications. This component offers a Drain-to-Source Voltage (Vdss) of 25V and a continuous drain current capability of 24A at ambient temperature (Ta) and 75A at case temperature (Tc). Featuring low on-resistance (Rds On) of 3mOhm at 30A and 10V, it ensures efficient power delivery. The device is housed in a 3-WDSON package (MG-WDSON-2, CanPAK M™) for surface mounting, with a maximum power dissipation of 2.2W (Ta) and 28W (Tc). Key parameters include a gate charge (Qg) of 23nC at 10V and input capacitance (Ciss) of 1700pF at 12V. Operating across a temperature range of -40°C to 150°C (TJ), this MOSFET is suitable for automotive and industrial power management systems.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-WDSON |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 24A (Ta), 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 3mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.2W (Ta), 28W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | MG-WDSON-2, CanPAK M™ |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1700 pF @ 12 V |