BSF024N03LT3GXUMA1
MOSFET N-CH 30V 15A/106A 2WDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ BSF024N03LT3GXUMA1 is an N-Channel Power MOSFET designed for demanding applications. This device features a 30V drain-source breakdown voltage and offers a continuous drain current of 15A at a 2.2W power dissipation (Ta), scaling to 106A at 42W (Tc). The low on-resistance of 2.4mOhm at 20A and 10V gate-source voltage, coupled with a low gate charge of 71nC at 10V, ensures high efficiency. With a maximum power dissipation of 42W (Tc) and an operating temperature range of -40°C to 150°C (TJ), this MOSFET is suitable for power conversion, automotive, and industrial systems. It is housed in a 3-WDSON package (MG-WDSON-2, CanPAK M™) and supplied on tape and reel.
Additional Information
Series: Optimos™RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-WDSON |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Ta), 106A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.4mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.2W (Ta), 42W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | MG-WDSON-2, CanPAK M™ |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 71 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5500 pF @ 15 V |
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