BSD816SNL6327HTSA1
MOSFET N-CH 20V 1.4A SOT363-6Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ BSD816SNL6327HTSA1 is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 20V and a continuous drain current (Id) of 1.4A at 25°C. The Rds(on) is specified at a maximum of 160mOhm at 1.4A and 2.5V gate-source voltage. With a gate charge (Qg) of 0.6 nC at 2.5V and input capacitance (Ciss) of 180 pF at 10V, it offers efficient switching characteristics. The device is housed in a compact PG-SOT363-PO (SOT-363) package and supports surface mounting. Operating temperature range is from -55°C to 150°C (TJ). This MOSFET finds utility in various industries including automotive, industrial, and consumer electronics.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-VSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.4A (Ta) |
| Rds On (Max) @ Id, Vgs | 160mOhm @ 1.4A, 2.5V |
| FET Feature | - |
| Power Dissipation (Max) | 500mW (Ta) |
| Vgs(th) (Max) @ Id | 950mV @ 3.7µA |
| Supplier Device Package | PG-SOT363-PO |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 2.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 0.6 nC @ 2.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 180 pF @ 10 V |
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