BSD816SNH6327XTSA1
MOSFET N-CH 20V 1.4A SOT363-6Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ BSD816SNH6327XTSA1 is a N-Channel Power MOSFET designed for demanding applications. This device features a 20 V drain-source voltage (Vdss) and a continuous drain current (Id) of 1.4 A at 25°C. The low on-resistance (Rds On) of 160 mOhm at 1.4 A and 2.5 V gate drive voltage, combined with a maximum power dissipation of 500 mW (Ta), makes it suitable for power management solutions. With a gate charge (Qg) of 0.6 nC at 2.5 V and input capacitance (Ciss) of 180 pF at 10 V, it offers efficient switching characteristics. The component is housed in a PG-SOT363-6 package, a 6-pin SOT-363/SC-88, and is supplied on tape and reel. This MOSFET is utilized in consumer electronics and industrial automation sectors.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-VSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.4A (Ta) |
| Rds On (Max) @ Id, Vgs | 160mOhm @ 1.4A, 2.5V |
| FET Feature | - |
| Power Dissipation (Max) | 500mW (Ta) |
| Vgs(th) (Max) @ Id | 950mV @ 3.7µA |
| Supplier Device Package | PG-SOT363-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 2.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 0.6 nC @ 2.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 180 pF @ 10 V |
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