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BSD316SNL6327XT

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BSD316SNL6327XT

MOSFET N-CH 30V 1.4A SOT363-6

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies OptiMOS™ BSD316SNL6327XT is a 30V N-Channel power MOSFET designed for surface mount applications. This component features a low on-resistance of 160mOhm maximum at 1.4A drain current and 10V gate-source voltage. The device is specified with a continuous drain current of 1.4A (Ta) and a power dissipation of 500mW (Ta). Key parameters include a gate charge (Qg) of 0.6 nC maximum at 5V Vgs and input capacitance (Ciss) of 94 pF maximum at 15V Vds. The BSD316SNL6327XT is offered in a PG-SOT363-PO package and is supplied on Tape & Reel. Its operating temperature range is -55°C to 150°C (TJ). This MOSFET is suitable for use in various industrial applications requiring efficient switching and power management.

Additional Information

Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-VSSOP, SC-88, SOT-363
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C1.4A (Ta)
Rds On (Max) @ Id, Vgs160mOhm @ 1.4A, 10V
FET Feature-
Power Dissipation (Max)500mW (Ta)
Vgs(th) (Max) @ Id2V @ 3.7µA
Supplier Device PackagePG-SOT363-PO
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs0.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds94 pF @ 15 V

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