BSD314SPEL6327HTSA1
MOSFET P-CH 30V 1.5A SOT363-6Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ P-Channel MOSFET, part number BSD314SPEL6327HTSA1, is a surface-mount device designed for efficient power switching applications. This component features a 30V drain-to-source voltage (Vdss) and a continuous drain current capability of 1.5A at 25°C. The P-channel MOSFET exhibits a maximum on-resistance (Rds On) of 140mOhm at 1.5A drain current and 10V gate-source voltage. With a gate charge (Qg) of 2.9 nC at 10V and input capacitance (Ciss) of 294 pF at 15V, it offers optimized switching characteristics. The device is packaged in a PG-SOT363-PO (6-VSSOP, SC-88) and operates across a temperature range of -55°C to 150°C. Power dissipation is rated at 500mW (Ta). This MOSFET is suitable for use in automotive and industrial electronics, particularly where space-constrained power management is critical.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-VSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 140mOhm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 500mW (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 6.3µA |
| Supplier Device Package | PG-SOT363-PO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 2.9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 294 pF @ 15 V |
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