BSD314SPEH6327XTSA1
MOSFET P-CH 30V 1.5A SOT363-6Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ P-Channel MOSFET, part number BSD314SPEH6327XTSA1. This device features a 30V drain-source voltage and a continuous drain current capability of 1.5A at 25°C (Ta). With a maximum power dissipation of 500mW (Ta) and a low on-resistance of 140mOhm at 1.5A and 10V Vgs, it is suitable for demanding applications. The MOSFET is housed in a PG-SOT363-6 package, facilitating surface mounting. Key parameters include a gate charge of 2.9 nC at 10V and input capacitance of 294 pF at 15V. The operating temperature range is -55°C to 150°C. This component is widely utilized in automotive and industrial power management solutions.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-VSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 140mOhm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 500mW (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 6.3µA |
| Supplier Device Package | PG-SOT363-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 2.9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 294 pF @ 15 V |
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