BSD214SN L6327
MOSFET N-CH 20V 1.5A SOT363-6Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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The Infineon Technologies OptiMOS™ BSD214SN-L6327 is an N-Channel MOSFET designed for efficient power switching applications. This component features a drain-to-source voltage (Vdss) of 20 V and a continuous drain current (Id) of 1.5 A at 25°C, with a power dissipation of 500 mW. The Rds On is specified at a maximum of 140 mOhm at 1.5 A and 4.5 V drive voltage. The device supports gate drive voltages from 2.5 V to 4.5 V, with a maximum gate-source voltage (Vgs) of ±12V. Key parameters include a maximum gate charge (Qg) of 0.8 nC at 5 V and an input capacitance (Ciss) of 143 pF at 10 V. The BSD214SN-L6327 is housed in a 6-pin PG-SOT363-PO package, suitable for surface mounting. Its operating temperature range is -55°C to 150°C. This component finds application in various industries including automotive and consumer electronics. It is supplied in Tape & Reel packaging.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-VSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 140mOhm @ 1.5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 500mW (Ta) |
| Vgs(th) (Max) @ Id | 1.2V @ 3.7µA |
| Supplier Device Package | PG-SOT363-PO |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 0.8 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 143 pF @ 10 V |
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