BSC889N03LSGATMA1
MOSFET N-CH 30V 13A/45A TDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ BSC889N03LSGATMA1 is an N-Channel Power MOSFET designed for demanding applications. This device features a 30V drain-source voltage (Vdss) and offers a continuous drain current of 13A at ambient temperature and 45A at case temperature. With a low on-resistance of 9mOhm at 30A and 10V Vgs, it minimizes conduction losses. Power dissipation capabilities are 2.5W (Ta) and 28W (Tc). The BSC889N03LSGATMA1 is housed in a PG-TDSON-8-1 package, suitable for surface mounting. Key parameters include a maximum gate charge of 16 nC and input capacitance of 1300 pF. This component is utilized in automotive, industrial, and consumer electronics power management systems. It operates across a temperature range of -55°C to 150°C.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta), 45A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 28W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | PG-TDSON-8-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 15 V |
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