BSC884N03MS G
MOSFET N-CH 34V 17A/85A TDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies BSC884N03MS-G is an N-Channel Power MOSFET from the OptiMOS™ series. This component features a 34V drain-source voltage (Vdss) and supports a continuous drain current of 17A at ambient temperature (Ta) and 85A at case temperature (Tc). The device offers a low on-resistance (Rds On) of 4.5mOhm at 30A and 10V Vgs. It is packaged in a PG-TDSON-8-1 (8-PowerTDFN) for surface mounting and has a maximum power dissipation of 2.5W (Ta) and 50W (Tc). Gate charge (Qg) is 34 nC maximum at 10V Vgs, and input capacitance (Ciss) is 2700 pF maximum at 15V Vds. Operating temperature ranges from -55°C to 150°C. This MOSFET is suitable for applications in automotive and industrial power management.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Ta), 85A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 50W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | PG-TDSON-8-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 34 V |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2700 pF @ 15 V |