BSC883N03MSGATMA1
MOSFET N-CH 34V 19A/98A TDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ BSC883N03MSGATMA1 is an N-channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 34V and offers a continuous drain current (Id) of 19A at 25°C ambient, scaling to 98A at 25°C case temperature. With a low on-resistance (Rds On) of 3.8mOhm maximum at 30A and 10V, it minimizes conduction losses. The device supports gate drive voltages from 4.5V to 10V and exhibits a maximum gate charge (Qg) of 41nC at 10V. Its input capacitance (Ciss) is 3200pF at 15V. The BSC883N03MSGATMA1 is housed in a PG-TDSON-8-1 package for surface mounting, providing a maximum power dissipation of 2.5W (Ta) and 57W (Tc). This MOSFET is suitable for use in automotive and industrial power management systems where high efficiency and thermal performance are critical. The operating temperature range is -55°C to 150°C.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19A (Ta), 98A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.8mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 57W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | PG-TDSON-8-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 34 V |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3200 pF @ 15 V |
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